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2SC4125 Data Sheet

Silicon NPN Power Transistor

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2SC4125

isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for very high-definition color.

2SC4125

Download 2SC4125 Datasheet

isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for very high-definition color display horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 3 W 70 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc.




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