Power Transistor. 2SC4125 Datasheet

2SC4125 Transistor. Datasheet pdf. Equivalent

Part 2SC4125
Description Silicon NPN Power Transistor
Feature INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4125 www.da.
Manufacture Inchange
Datasheet
Download 2SC4125 Datasheet



2SC4125
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4125
www.datasheet4u.com
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for very high-definition color display horizontal
deflection output applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
1500
V
wwwVCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
10
A
ICP Collector Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
25 A
3
W
70
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn



2SC4125
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4125
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 2A
ICBO Collector Cutoff Current
VCB= 800V ; IE= 0
5.0 V
1.5 V
10 μA
ICES Collector Cutoff Current
VCE= 1500V ; RBE= 0
IEBO Emitter Cutoff Current
i.cnhFE-1
DC Current Gain
.iscsemhFE-2
DC Current Gain
wwwVECF
C-E Diode Forward Voltage
VEB= 4V ; IC= 0
IC= 1A ; VCE= 5V
IC= 8A ; VCE= 5V
IF= 10A
40
8
4
Switching Times
1 mA
130 mA
6
2.0 V
ts Storage Time
tf Fall Time
IC= 6A, IB1= 1.2A; IB2= -2.4A
3.0 μs
0.1 0.2 μs
isc Websitewww.iscsemi.cn
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)