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11N60S5 Datasheet, Equivalent, SPP11N60S5.

SPP11N60S5

SPP11N60S5

 

 

 

Part 11N60S5
Description SPP11N60S5
Feature Cool MOS™ Power Transistor Feature
• New revolutionary high voltage technol ogy
• Ultra low gate charge
• Perio dic avalanche rated
• Extreme dv/dt r ated
• Ultra low effective capacitanc es
• Improved transconductance SPP11 N60S5 SPI11N60S5 VDS RDS(on) ID 600 V 0.
38 Ω 11 A PG-TO262 PG-TO220 2 P -TO220-3-1 23 1 Type SPP11N60S5 SPI11 N60S5 Package PG-TO220 PG-TO262 Order ing Code Q67040-S4198 Q67040-S4338 Mar king 11N60S5 11N60S5 Maximum Ratings Parameter Symbol Continuous drain cur rent ID TC = 25 °C TC = 100 °C Pu lsed drain current, tp limited by Tjmax ID puls Avalanche energy, sin .
Manufacture Infineon Technologies AG
Datasheet
Download 11N60S5 Datasheet
Part 11N60S5
Description SPP11N60S5
Feature Cool MOS™ Power Transistor Feature
• New revolutionary high voltage technol ogy
• Ultra low gate charge
• Perio dic avalanche rated
• Extreme dv/dt r ated
• Ultra low effective capacitanc es
• Improved transconductance SPP11 N60S5 SPI11N60S5 VDS RDS(on) ID 600 V 0.
38 Ω 11 A PG-TO262 PG-TO220 2 P -TO220-3-1 23 1 Type SPP11N60S5 SPI11 N60S5 Package PG-TO220 PG-TO262 Order ing Code Q67040-S4198 Q67040-S4338 Mar king 11N60S5 11N60S5 Maximum Ratings Parameter Symbol Continuous drain cur rent ID TC = 25 °C TC = 100 °C Pu lsed drain current, tp limited by Tjmax ID puls Avalanche energy, sin .
Manufacture Infineon Technologies AG
Datasheet
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11N60S5

11N60S5
11N60S5

11N60S5

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