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LET21004

Part Number	LET21004
Manufacturer	STMicroelectronics
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Published	Mar 22, 2005
Detailed Description	LET21004 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 ...
Datasheet	LET21004 PDF File

Overview

LET21004 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION PowerFLAT™(5x5) DESCRIPTION The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 26 V in common source mode at frequencies up to 2.
1 GHz.
LET21004 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative...

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