Effect Transistor. 2SK3296 Datasheet

2SK3296 Transistor. Datasheet pdf. Equivalent

Part 2SK3296
Description MOS Field Effect Transistor
Feature www.DataSheet4U.com SMD Type MOS Field Effect Transistor 2SK3296 Features 4.5 V drive available Low.
Manufacture Guangdong Kexin Industrial
Datasheet
Download 2SK3296 Datasheet




2SK3296
www.DataSheet4U.com
SMD Type
MOS Field Effect Transistor
2SK3296
MOSFET
Features
4.5 V drive available
Low on-state resistance
RDS(on)1 = 12m MAX. (VGS = 10 V, ID = 18 A)
Low gate charge
QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
20
20
35
140
1.5
40
150
-55 to +150
Unit
V
V
A
A
W
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
VDS=20V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=18A
VGS=10V,ID=18A
VGS=4.5V,ID=18A
VDS=10V,VGS=0,f=1MHZ
Min
1.0
9.0
ID=18A,VGS(on)=10V,RG=10 ,VDD=10V
Typ
8.5
12
1300
570
300
70
1220
100
180
Max
10
10
2.5
12
19
Unit
A
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
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