Effect Transistor. 2SK3294 Datasheet

2SK3294 Transistor. Datasheet pdf. Equivalent

Part 2SK3294
Description MOS Field Effect Transistor
Feature www.DataSheet4U.com SMD Type MOS Field Effect Transistor 2SK3294 TO-263 +0.1 1.27-0.1 MOSFET Unit.
Manufacture Guangdong Kexin Industrial
Datasheet
Download 2SK3294 Datasheet




2SK3294
www.DataSheet4U.com
SMD Type
MOS Field Effect Transistor
2SK3294
MOSFET
Features
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)
Low input capacitance
Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
250
30
20
60
100
1.5
150
-55 to +150
Unit
V
V
A
A
W
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
VDS=250V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=10A
VGS=10V,ID=10A
VDS=10V,VGS=0,f=1MHZ
ID=10A,VGS(on)=10V,RG=10
,VDD=125V
Min Typ Max Unit
100 A
10 A
2.5 4.5 V
6.0 S
120 160 m
1500
pF
360 pF
220 pF
24 ns
78 ns
110 ns
60 ns
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