Power MOSFET. KRF7301 Datasheet

KRF7301 MOSFET. Datasheet pdf. Equivalent

Part KRF7301
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7301 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7301 Datasheet




KRF7301
SMD Type
HEXFET Power MOSFET
KRF7301
Features
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25
ID
Continuous Drain Current, VGS @ 4.5V,Ta = 25
ID
Continuous Drain Current, VGS @ 4.5V,TC = 70
ID
Pulsed Drain Current*1
IDM
Power Dissipation Ta = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt*2
dv/dt
Operating Junction and Storage Temperature Range TJ,TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD 2.6A, di/dt 100A/ s, VDD V(BR)DSS,TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
Rating
5.7
5.2
4.1
21
2
0.016
12
5
-55 to + 150
62.5
Unit
A
W
W/
V
V/ns
/W
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KRF7301
SMD Type
ICIC
KRF7301
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250A
V(BR)DSS/ TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 4.5V, ID = 2.6A*1
VGS = 2.7V, ID = 2.2A*1
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 15V, ID = 2.6A*1
IDSS
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125
IGSS
VGS = 12V
VGS = -12V
Qg ID = 2.6A
Qgs VDS = 16V
Qgd VGS = 4.5V,*1
td(on)
VDD = 10V
tr ID = 2.6A
td(off)
RG = 6.0
tf RD = 3.8 *1
Min Typ Max Unit
20 V
0.044
V/
0.050
0.070
0.70 V
8.3 S
1.0
A
25
100
nA
-100
20
2.2 nC
8.0
9.0
42
ns
32
51
Intermal Drain Inductance
Internal Source Inductance
LD
LS
4.0
nH
6.0
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V
VDS = 15V
f = 1.0MHz
660
280 pF
140
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
IS
ISM
2.5
A
21
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
VSD
trr
Qrr
ton
TJ = 25 , IS = 1.8A, VGS = 0V*1
1.0 V
TJ = 25 , IF =2.6A
29 44 ns
di/dt = 100A/ s*1
22 33
C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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