Power MOSFET. KRF7307 Datasheet

KRF7307 MOSFET. Datasheet pdf. Equivalent

Part KRF7307
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7307 Features Generation V Technology Ultra Low On-Resistance Dual N.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7307 Datasheet



KRF7307
SMD Type
HEXFET Power MOSFET
KRF7307
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
10 Sec. Pulse Drain Current, VGS @ 4.5V Ta = 25
ID
Continuous Drain Current VGS @ 4.5V Ta = 25
ID
Continuous Drain Current VGS @ 4.5V Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25
PD
Linear Derating Factor (PCB Mount)
Peak Diode Recovery dv/dt *2
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient*3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
5.7 -4.7
5.2 -4.3
4.1 -3.4
21 -17
2.0
0.016
5.0 -5.0
12
-55 to + 150
62.5
*2 N-Channel ISD 2.6A, di/dt 100A/ s, VDD
P-Channel ISD -2.2A, di/dt 50A/ s, VDD
*3 Surface mounted on FR-4 board, t 10sec.
V(BR)DSS, TJ
V(BR)DSS, TJ
150
150
Unit
A
W
W/
V/ ns
V
/W
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KRF7307
SMD Type
ICIC
KRF7307
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
VGS = 4.5V, ID = 2.6A*1
RDS(on)
VGS = 2.7V, ID = 2.2A*1
VGS = -4.5V, ID = -2.2A*1
VGS = -2.7V, ID = -1.8A*1
VGS(th)
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS =15V, ID = 2.6A*1
gfs
VDS = -15V, ID = -2.2A*1
VDS = 16V, VGS = 0V
VDS = -16V, VGS = 0V
IDSS
VDS = 16V, VGS = 0V, TJ = 125
VDS = -16V, VGS = 0V, TJ = 125
IGSS VGS = 12V
N-Channel
Qg
ID =2.6A,VDS = 16V,VGS =4.5V *1
Qgs
P-Channel
ID = -2.2A,VDS = -16V,VGS = -4.5V *1
Qgd
td(on)
tr
td(off)
N-Channel
VDD = 10V,ID = 2.6A,RG = 6.0
RD = 3.8 *1
P-Channel
VDD = -10V,ID = -2.2A,RG = 6.0
RD = 4.5 1*1
tf
LD
LS
Ciss
Coss
Crss
Between lead tip
and center of die contact
N-Channel
VGS = 0V,VDS = 15V,f = 1.0MHz *1
P-Channel
VGS = 0V,VDS = -15V,f = 1.0MHz *1
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
20
V
-20
0.044
-0.012
V/
0.050
0.070
0.090
0.140
0.70
-0.70
V
8.30
S
4.00
1.0
-1.0
A
25
-25
100
nA
100
20
22
2.2
nC
3.3
8.0
9.0
9.0
8.4
42
26
ns
32
51
51
33
4.0
4.0
nH
6.0
6.0
660
610
280
pF
310
140
170
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