Power MOSFET. KRF7338 Datasheet

KRF7338 MOSFET. Datasheet pdf. Equivalent

Part KRF7338
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7338 IC IC Features Ultra Low On-Resistance Dual N and P Channel M.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7338 Datasheet




KRF7338
SMD Type
HEXFET Power MOSFET
KRF7338
Features
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current,VGS@10V , Ta = 25
ID
Continuous Drain Current ,VGS@10V , Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
Power Dissipation
@Ta= 25 *3
@Ta= 70 *3
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
Junction-to-Drain Lead
R JL
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Pulse width 400 s; duty cycle 2%.
*3 Surface mounted on 1 in square Cu board.
*4 The N-channel MOSFET can withstand 15V VGS max
for up to 24 hours over the life of the device.
N-Channel
P-Channel
12 -12
6.3 -3.0
5.2 -2.5
26 -13
2.0
1.3
16
12 *4
8.0
-55 to + 150
62.5
20
Unit
V
A
W
mV/
V
/W
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KRF7338
SMD Type
ICIC
KRF7338
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
VGS = 4.5V, ID = 6.0A*1
VGS = 3.0V, ID = 2.0A*1
RDS(on)
VGS = -4.5V, ID = -2.9A*1
VGS = -2.7V, ID = -1.5A*1
VGS(th)
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS =6V, ID = 6.0A*1
gfs
VDS = -6.0V, ID = -1.5A*1
VDS = 9.6V, VGS = 0V
IDSS
VDS = -9.6V, VGS = 0V
VDS = 9.6V, VGS = 0V, TJ = 55
VDS = -9.6V, VGS = 0V, TJ = 55
IGSS
Qg
VGS = 12V
VGS = 8V
N-Channel
ID =6.0A,VDS = 6.0V,VGS =4.5V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs
P-Channel
ID = -2.9A,VDS = -9.6V,VGS = -4.5V
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
N-Channel
VDD = 6V,ID = 1.0A,RG = 6.0
VGS = 4.5V
P-Channel
VDD = -28V,ID = -1.0A,RG = 6.0
VGS = -4.5V
Fall Time
tf
Input Capacitance
N-Channel
Ciss
VGS = 0V,VDS = 9.0V,f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
P-Channel
VGS = 0V,VDS = -9.0V,f = 1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
12
V
-12
0.01
-0.01
V/
0.034
0.060
0.150
0.200
0.6
-0.40
1.5
V
-1.0
9.2
S
3.5
20
-1.0
A
50
-25
100
nA
100
8.6
6.6
1.9
nC
1.3
3.9
1.6
6.0
9.6
7.6
13
ns
26
27
34
25
640
490
340
pF
80
110
58
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