Power MOSFET. KRF7343 Datasheet

KRF7343 MOSFET. Datasheet pdf. Equivalent

Part KRF7343
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7343 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7343 Datasheet



KRF7343
SMD Type
HEXFET Power MOSFET
KRF7343
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current,VGS@10V , Ta = 25
ID
Continuous Drain Current ,VGS@10V , Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
Power Dissipation
@Ta= 25 *5
@Ta= 70 *5
PD
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy *3
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *5
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
55 -55
4.7 -3.4
3.8 -2.7
38 -27
2.0
1.3
20
72 114
4.7 -3.4
0.20
5.0 -5.0
-55 to + 150
62.5
*2 N-Channel ISD 4.7A, di/dt 220A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -3.4A, di/dt -150A/ s, VDD V(BR)DSS, TJ 150
*3 N-Channel Starting TJ = 25 , L = 6.5mH RG = 25 , IAS = 4.7A.
P-Channel Starting TJ = 25 , L = 20mH RG = 25 , IAS = -3.4A.
*5 Surface mounted on FR-4 board, t 10sec.
*4 Pulse width 300 s; duty cycle 2%.
Unit
V
A
W
V
mJ
A
mJ
V/ns
/W
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KRF7343
SMD Type
ICIC
KRF7343
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
VGS = 10V, ID = 4.7A*1
VGS = 4.5V, ID = 3.8A*1
RDS(on)
VGS = -10V, ID = -3.4A*1
VGS = -4.5V, ID = -2.7A*1
VGS(th)
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 10V, ID = 4.5A*1
gfs
VDS = -10V, ID = -3.5A*1
VDS = 55V, VGS = 0V
IDSS
VDS = -55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 55
VDS = -55V, VGS = 0V, TJ = 55
Gate-to-Source Forward Leakage
IGSS VGS = 20V
Total Gate Charge
N-Channel
Qg
ID =4.5A,VDS = 44V,VGS =10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs
P-Channel
ID = -3.1A,VDS = -44V,VGS = -10V
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
N-Channel
VDD = 28V,ID = 1.0A,RG = 6.0
RD=16
P-Channel
VDD = -28V,ID = -1.0A,RG = 6.0
RD=16
Fall Time
tf
Input Capacitance
N-Channel
Ciss
VGS = 0V,VDS = 25V,f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
P-Channel
VGS = 0V,VDS = -25V,f = 1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
55
V
-55
0.059
0.054
V/
0.043 0.050
0.056 0.065
0.095 0.105
0.150 0.170
V
S
2.0
-2.0
A
25
-25
100
nA
100
24 36
26 38
2.3 3.4
nC
3.0 4.5
7.0 10
8.4 13
8.3 12
14 22
3.2 4.8
10 15
ns
32 48
43 64
13 20
22 32
740
690
190
pF
210
71
86
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