Power Transistor. 2SC1970 Datasheet

2SC1970 Transistor. Datasheet pdf. Equivalent

Part 2SC1970
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1970 DESCRIPTION ·High Power Gain- : Gp.
Manufacture Inchange Semiconductor
Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC 2SC1970 Datasheet
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2SC1970
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1970
DESCRIPTION
·High Power Gain-
: Gpe9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V
·High Reliability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage RBE=
17
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
Tj
Junction Temperature
0.6
A
5
W
1
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 125 /W
Rth j-c Thermal Resistance,Junction to Case
25 /W
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2SC1970
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1970
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA, IC= 0
ICBO
Collector Cutoff Current
VCB= 25V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 10V
PO
Output Power
ηC
Collector Efficiency
VCC= 13.5V; Pin= 0.12W;
f= 175MHz
MIN TYP. MAX UNIT
40
V
17
V
4
V
0.1 mA
0.1 mA
10
180
1
1.2
W
50
60
%
hFE Classifications
X
A
B
C
D
10-25 20-45 35-70 55-110 90-180
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products,
and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark





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