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2SC1970 Datasheet, Equivalent, Power Transistor.

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part 2SC1970
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC1970 DESCRIPTION High Power Gain- : Gpe≥ 9.
2dB,f= 175 MHz, PO= 1W; VCC= 13.
5V ·High Reliabil ity ·100% avalanche tested ·Minimum L ot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for RF power ampli fiers on VHF band mobile radio applicat ions.
ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC BO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage RBE= ∞ 1 7 V VEBO Emitter-Base Voltage 4 V IC Collector Current Collector Power Dissipation @TC=25℃ PC C .
Manufacture Inchange Semiconductor
Datasheet
Download 2SC1970 Datasheet
Part 2SC1970
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC1970 DESCRIPTION High Power Gain- : Gpe≥ 9.
2dB,f= 175 MHz, PO= 1W; VCC= 13.
5V ·High Reliabil ity ·100% avalanche tested ·Minimum L ot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for RF power ampli fiers on VHF band mobile radio applicat ions.
ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC BO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage RBE= ∞ 1 7 V VEBO Emitter-Base Voltage 4 V IC Collector Current Collector Power Dissipation @TC=25℃ PC C .
Manufacture Inchange Semiconductor
Datasheet
Download 2SC1970 Datasheet

2SC1970

2SC1970
2SC1970

2SC1970

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