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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC1971
DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability
APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PARAMETER ...
