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GT60M324
Silicon N-Channel IGBT
Description
GT60M324 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT Unit: mm FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.11μs (typ.) (IC = 60A) FRD : trr = 0.8μs (typ.) (di/dt = −20 A/μs) Low sat...
Toshiba
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