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2SD1770

Silicon NPN Darlington Power Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Type 2SB1190 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. ABSOLUTE MAXIMUM RATIN...

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