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2SD1720

Part Number	2SD1720
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistor 2SD1720 DESCRIPTION ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltag...
Datasheet	2SD1720 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1720 DESCRIPTION ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.
0V(Max.
)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1291 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg ...

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