AP9971GM Datasheet PDF


Part Number

AP9971GM

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 5 Pages
PDF Download
Download AP9971GM Datasheet PDF


Features Datasheet pdf AP9971GM RoHS-compliant Product Advance d Power Electronics Corp. ▼ Low On-re sistance ▼ Single Drive Requirement Surface Mount Package D1 G2 S2 D2 D2 D1 N-CHANNEL ENHANCEMENT MODE POWER M OSFET BVDSS RDS(ON) ID 60V 50mΩ 5A D 2 SO-8 S1 G1 Description Advanced P ower MOSFETs from APEC provide the desi gner with the best combination of fast switching, ruggedized device design, ul tra low on-resistance and cost-effectiv eness. G1 D1 G2 S1 S2 Absolute Maxim um Ratings Symbol VDS VGS ID@TA=25℃ w ww.DataSheet4U.com Parameter Drain-Sou rce Voltage Gate-Source Voltage Continu ous Drain Current3, VGS @ 10V Continuou s Drain Current , VGS @ 10V Pulsed Drai n Current 1,2 3 Rating 60 +25 5 3.2 30 2 0.0.
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AP9971GM Datasheet
Advanced Power
Electronics Corp.
AP9971GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
60V
50mΩ
5A
D1 D2
G1 G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
www.DataSIDh@eetT4AU=.c1o0m0
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
60
+25
5
3.2
30
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200811042




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