2SK4002 MOSFET Datasheet

2SK4002 Datasheet PDF, Equivalent


Part Number

2SK4002

Description

N-Channel MOSFET

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
PDF Download
Download 2SK4002 Datasheet PDF


2SK4002
2SK4002
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (πMOS V)
2SK4002
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drainsource ON-resistance
: RDS (ON) = 4.2 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 1.7 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5±0.2
5.2±0.2
0.9
2.3 2.3
0.6 MAX.
1.1±0.2
0.6 MAX
Characteristic
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 μs)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
www.DataShSetoerta4gUe.cteomperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
2
5
8
20
93
2
2
150
55~150
Unit
V
V
V
A
A
A
W
mJ
A
mJ
°C
°C
123
0.8 MAX.
1.1 MAX.
0.6±0.15
0.6±0.15
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
6.25 °C / W
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-08

2SK4002
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
toff
Qg
Qgs VDD 480 V, VGS = 10 V, ID = 2 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
www.DataSheet4U.com
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
IDRP
VDSF
trr
Qrr
Test Condition
t = 1 ms
t = 100 μs
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK4002
Min Typ. Max Unit
— — ±10
±30 —
— — 100
600 —
2.0 — 4.0
— 4.2 5.0
0.8 1.7
— 380 —
— 40 —
— 120 —
μA
V
μA
V
V
Ω
S
pF
— 15 —
— 25 —
ns
— 20 —
— 80 —
—9—
— 5 — nC
—4—
Min Typ. Max Unit
—— 2 A
—— 5 A
—— 8 A
— — 1.5 V
— 1000 —
ns
— 3.5 — μC
K4002
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-08


Features 2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4002 Chopper Regulator, DC/DC Con verter and Motor Drive Applications 6 .5±0.2 Unit: mm 1.5± 0.2 z Low drain−source ON-resi stance z High forward transfer admittan ce z Low leakage current z Enhancement mode : RDS (ON) = 4.2 Ω (typ.) 5 2±0.2 0.6 MAX. : Vt h = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 1.6 5.5±0.2 : |Yfs | = 1.7 S (typ.) : IDSS = 100 μA (max) (VDS = 600 V) 0.9 1.1± .2 4.1±0.2 5. 0.6 MAX Absolute Maximum Rati ngs (Ta = 25°C) Characteristic Drain source voltage Drain−gate voltage (R GS = 20 kΩ) Gate−source voltage DC (Note 1) Symbol VDSS VDGR VGSS ID IDP I DP PD EAS IAR EAR Tch Tstg Rating 600 6 00 ±30 2 5 Unit V V V 0.8 MAX. 1.1 MAX. 1 2.3 2. 2.3±0.2 0.6±0 15 0.6±0.15 2 3 A A A W mJ A mJ °C °C Drain current Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1) JEDEC JEITA ― ― 2-7J2B 8 20 93 2 2 150 −55~150 TOSHIBA Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (No.
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