2SK4003 MOSFET Datasheet

2SK4003 Datasheet PDF, Equivalent


Part Number

2SK4003

Description

N-Channel MOSFET

Manufacture

Toshiba Semiconductor

Total Page 3 Pages
Datasheet
Download 2SK4003 Datasheet


2SK4003
2SK4003
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (πMOS VI)
2SK4003
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drainsource ON-resistance
: RDS (ON) = 1.7 Ω (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5±0.2
5.2±0.2
0.9
2.3 2.3
0.6 MAX.
1.1±0.2
0.6 MAX
Characteristic
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
3
12
20
168
3
2
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
123
0.8 MAX.
1.1 MAX.
0.6±0.15
0.6±0.15
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
www.DataSheet4U.ocpoemrating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (cha)
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.2 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-08

2SK4003
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1.5 A
VDS = 10 V, ID = 1.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
Switching time
Turnon time
Fall time
Turnoff time
tr
ton
tf
toff
10 V
VGS
0V
50 Ω
ID = 1.5 A VOUT
RL=
133Ω
VDD ∼− 200 V
Duty <= 1%, tw = 10 μs
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 3 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
www.DataSheet4U.com
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 3 A, VGS = 0 V
IDR = 3 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK4003
Min Typ. Max Unit
— — ±10
±30 —
— — 100
600 —
2.0 — 4.0
— 1.7 2.2
0.5 2.0
— 600 —
—7—
— 60 —
μA
V
μA
V
V
Ω
S
pF
— 16 —
— 40 —
ns
— 18 —
— 80 —
— 15 —
— 9 — nC
—6—
Min Typ. Max Unit
—— 3 A
— — 12 A
— — 1.7 V
— 800 —
ns
— 5 — μC
K4003
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-08


Features 2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI ) 2SK4003 Chopper Regulator, DC/DC Con verter and Motor Drive Applications 6 .5±0.2 Unit: mm 1.5± 0.2 z Low drain−source ON-resi stance z Low leakage current z Enhancem ent mode : RDS (ON) = 1.7 Ω (typ.) .2±0.2 0.6 MAX. : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A) 1.6 5.5±0.2 : IDSS = 100 μA (max) (VDS = 600 V) 0 9 4.1±0.2 1.1± 0.2 5.7 0.6 MAX Ab solute Maximum Ratings (Ta = 25°C) 2 .3 2.3 Characteristic Drain source voltage Drain−gate voltage ( RGS = 20 kΩ) Gate−source voltage DC Drain current Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IA R EAR Tch Tstg Rating 600 600 ±30 3 1 2 20 168 3 2 150 −55~150 Unit 1 3 V V V 0.8 MAX. 1.1 M AX. 0.6±0.15 0.6 ±0.15 A A W mJ A mJ °C °C 2.3±0.2 Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B.
Keywords 2SK4003, datasheet, pdf, Toshiba Semiconductor, N-Channel, MOSFET, SK4003, K4003, 4003, 2SK400, 2SK40, 2SK4, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)