Silicon N Channel MOS FET High Speed Power Switching
Description
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0512-0100 Rev.1.00 Jan.14.2005
Features
Low on-resistance Low leakage current High speed switching
Outline
LDPAK
D 4 4 4
G 1
1
2
3
1
S
3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ
2
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
(Ta = 25°C)...
