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APT11N80BC3

Advanced Power Technology
Part Number APT11N80BC3
Manufacturer Advanced Power Technology
Description Super Junction MOSFET
Published Mar 27, 2010
Detailed Description APT11N80BC3 www.DataSheet4U.com 800V 11A 0.45Ω Super Junction MOSFET C O OLMOS Power Semiconductors TO-247 • Ultra l...
Datasheet PDF File APT11N80BC3 PDF File

APT11N80BC3
APT11N80BC3

Overview
APT11N80BC3 www.
DataSheet4U.
com 800V 11A 0.
45Ω Super Junction MOSFET C O OLMOS Power Semiconductors TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified.
APT11N80BC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 800 11 33 ±20 ±30 156 1.
25 -55 to 150 260 50 11 0.
2 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead ...


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