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B WFP2N60 FP2N60B
Silicon N-Channel MOSFET
Features
■ 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This lates...
