N-Channel MOSFET. 2SK3132 Datasheet


2SK3132 MOSFET. Datasheet pdf. Equivalent


2SK3132


N-Channel MOSFET
2SK3132
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3132
Chopper Regulator DC−DC Converter, and Motor Drive Applications
l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 0.07 Ω (typ.) : |Yfs| = 33 S (typ.) Unit: mm

: IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DCDrain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 50 200 250 525 50 25 150 −55~150 Unit V V V A A W mJ A mJ °C °C

Pulse (Note 1)

Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

— — 2-21F1B

Weight: 9.75 g (typ.)

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.5 35.7 Unit °C / W °C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. ...



2SK3132
2SK3132
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3132
Chopper Regulator DCDC Converter, and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 0.07 (typ.)
l High forward transfer admittance : |Yfs| = 33 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
l Enhancementmode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
DCDrain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
50
200
250
525
50
25
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.5 °C / W
35.7 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 , IAR = 50 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
www.DataSheet.in
1 2002-01-25

2SK3132
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 25 A
VDS = 10 V, ID = 25 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK3132
Min Typ. Max Unit
— — ±10
±30 —
— — 100
500 —
2.4 — 3.4
— 0.07 0.095
15 33 —
— 11000 —
— 2100 —
— 4200 —
µA
V
µA
V
V
S
pF
— 105 —
Switching time
Turnon time
Fall time
ton
tf
— 160 —
— 65 —
ns
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 50 A
Qgd
— 245 —
— 280 —
— 150 —
— 130 —
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 25 A, VGS = 0 V
IDR = 50 A, VGS = 0 V
dIDR / dt = 100 A / µs
Min Typ. Max Unit
— — 50 A
— — 200 A
1.7
V
— 600 —
ns
— 12 — µC
Marking
TOSHIBA
2SK3132
Lot Number
Type
Month (starting from alphabet A)
Year (last number of the christian era)
www.DataSheet.in
2 2002-01-25




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