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D2136 Data Sheet

2SD2136

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D2136

www.DataSheet.co.kr Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation volta.

D2136

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www.DataSheet.co.kr Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ ■ Features 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 60 6 3 5 1.5 150 −55 to +150 Unit V V 0.5±0.1 0.8 C 1 2 3 2.05.




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