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2SC2668

Toshiba Semiconductor
Part Number 2SC2668
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description 2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Application...
Datasheet PDF File 2SC2668 PDF File

2SC2668
2SC2668

Overview
2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Applications FM, RF, IF Amplifier Applications Unit: mm · Small reverse transfer capacitance: Cre = 0.
70 pF (typ.
) · Low noise figure: NF = 2.
5dB (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature range Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 30 4 20 4 100 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.
13 g (typ.
) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain ICBO IEBO VCB = 40 V, IE = 0 VEB = 4 V, IC = 0 hFE (Note) VCE = 6 V, IC = 1 mA Cre VC...


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