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2SJ681. J681 Datasheet

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2SJ681. J681 Datasheet






J681 2SJ681. Datasheet pdf. Equivalent




J681 2SJ681. Datasheet pdf. Equivalent





Part

J681

Description

2SJ681



Feature


www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII ) 2SJ681 Relay Drive, DC−DC Converte r and Motor Drive Applications ï¼–ï¼Žï¼ •Â±ï¼ï¼Žï¼’ 5.2±0.2 ï¼‘ï¼ Žï¼•Â±ï¼ï¼Žï¼’ Unit: mm 0.6 MAX . z High forward transfer admittance : |Yfs| = 5.0 S (typ.) z Low leakage cu rrent: IDSS = −100 µA (max) (VDS = −60 V) z Enhancement mode: Vth = −.
Manufacture

Toshiba

Datasheet
Download J681 Datasheet


Toshiba J681

J681; 0.8 to −2.0 V (VDS = −10 V, ID = − 1 mA) 1.6 z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ .) 0.9 5.5±0.2 z 4 -V gate drive 1.1±0.2 ï¼ ”.1±0.2 5.7 ï¼ï¼Žï¼ – MAX 2.3 2.3 2.3± 0.2 0.6±0.15 ï¼ï¼ Žï¼–±0.15 1 2 3 Maxi mum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation .


Toshiba J681

Single pulse avalanche energy (Note 2) A valanche current Repetitive avalenche e nergy (Note 3) Channel temperature Stor age temperature range DC (Note 1) Symbo l VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 ⠈’20 20 40.5 −5 2 150 −55~150 Unit V V V A A W mJ A mJ °C °C 0.8 MAX. 1.1 MAX. Pulse(Note 1) J EDEC JEITA TOSHIBA ― ― 2-7J2B Weight: 0.36 g .


Toshiba J681

(typ.) Thermal Characteristics Characte ristics Thermal resistance, channel to case Thermal resistance, channel to amb ient Symbol Rth (ch−c) Rth (ch−a) M ax 6.25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = ⠈’25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A Note 3: R epetitive rating: pulse width lim.

Part

J681

Description

2SJ681



Feature


www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII ) 2SJ681 Relay Drive, DC−DC Converte r and Motor Drive Applications ï¼–ï¼Žï¼ •Â±ï¼ï¼Žï¼’ 5.2±0.2 ï¼‘ï¼ Žï¼•Â±ï¼ï¼Žï¼’ Unit: mm 0.6 MAX . z High forward transfer admittance : |Yfs| = 5.0 S (typ.) z Low leakage cu rrent: IDSS = −100 µA (max) (VDS = −60 V) z Enhancement mode: Vth = −.
Manufacture

Toshiba

Datasheet
Download J681 Datasheet




 J681
www.DataSheet4U.com
www.DataSheet.co.kr
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ681
2SJ681
Relay Drive, DC−DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
−60
−60
±20
−5
−20
20
40.5
−5
2
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
6.5±0.2
5.2±0.2
Unit: mm
0.6 MAX.
0.9
2.3 2.3
1.1±0.2
0.6 MAX
123
0.8 MAX.
1.1 MAX.
0.6±0.15
0.6±0.15
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
6.25
125
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH,
RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-06-30
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 J681
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±16 V, VDS = 0 V
VDS = −60 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
ID = −10 mA, VGS = 20 V
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −2.5 A
VGS = −10 V, ID = −2.5 A
VDS = −10 V, ID = −2.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
VGS0 V
−10 V
ID = −2.5 A
Output
RL =
12 Ω
VDD ∼− −30 V
Duty <= 1%, tw = 10 µs
Qg
Qgs VDD ≈ −48 V, VGS = −10 V, ID = −5 A
Qgd
2SJ681
Min
—
—
−60
−35
−0.8
—
—
2.5
—
—
—
Typ.
—
—
—
—
—
0.16
0.12
5.0
700
60
90
Max
±10
−100
—
—
−2.0
0.25
0.17
—
—
—
—
Unit
µA
µA
V
V
V
Ω
S
pF
— 14 —
— 24 —
ns
— 14 —
— 95 —
— 15 —
— 11 — nC
—4—
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = −5 A, VGS = 0 V
IDR = −5 A, VGS = 0 V
dlDR / dt = 50 A / µS
Min Typ. Max Unit
— — −5 A
— — −20 A
— — 1.7 V
— 40 — ns
— 32 — nC
Marking
J681
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-06-30
Datasheet pdf - http://www.DataSheet4U.net/




 J681
www.DataSheet4U.com
www.DataSheet.co.kr
ID – VDS
−5
−10 −6 −4. −3.5
Common source
Tc = 25°C
−8
−4
Pulse test
−3
−3
−2.8
−2
VGS = −2.5V
−1
0
0 −0.4 −0.8 −1.2 −1.6 −2.0
Drain−source voltage VDS (V)
2SJ681
−10
−10 −6 −4
−8 −8
−6
ID – VDS
−3.5
Common source
Tc = 25°C
Pulse test
−4 −3
−2
VGS = −2.5 V
0
0 −2 −4 −6 −8 −10
Drain−source voltage VDS (V)
−10
Common source
VDS = −10 V
Pulse test
−8
ID – VGS
−6
25
−4
−2 100 Tc = −55°C
0
0 −1 −2 −3 −4 −5
Gate−source voltage VGS (V)
VDS – VGS
−2.0
Common source
Tc = 25°C
Pulse test
−1.6
−1.2
−0.8
−0.4
0
0
−5
−2.5
ID = −1.2 A
−4 −8 −12 −16
Gate−source voltage VGS (V)
−20
⎪Yfs⎪ − ID
100 Common source
VDS = −10 V
Pulse test
10 Tc = −55°C
100
25
1
0.1
−0.1
−1 −10
Drain current ID (A)
−100
RDS (ON) − ID
0.5
Common source
Tc = 25°C
Pulse test
0.4
0.3
0.2 −4 V
0.1 VGS = −10V
0
0 −2 −4 −6 −8 −10
Drain current ID (A)
3 2006-06-30
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