Preliminary Datasheet
RJP1CS06DWT/RJP1CS06DWA
Silicon N Channel IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0829EJ0002 Rev.0.02 Jul 05, 2012
Outline
Die: RJP1CS06DWT-80
2 C 3
Wafer: RJ...
