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BDY53
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applicati...
Inchange Semiconductor
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