MJE13007 TRANSISTOR Datasheet

MJE13007 Datasheet, PDF, Equivalent


Part Number

MJE13007

Description

SILICON POWER TRANSISTOR

Manufacture

Comset Semiconductors

Total Page 3 Pages
Datasheet
Download MJE13007 Datasheet


MJE13007
SEMICONDUCTORS
MJE13007
SILICON POWER TRANSISTORS
NPN power transistors in a TO-220 package. They are intended for high voltage, high speed power
switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V
SWITCHMODE applications such as switching regulator’s, inverters, motor controls, solenoid/relay
drivers and deflection circuits.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
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ICM Collector Peak Current (*)
IB Base Current
IBM Base Peak Current (*)
IE Emitter Current
IEM Emitter Peak Current (*)
PT Power Dissipation at Case Temperature
tJ Junction Temperature
ts Storage Temperature range
(*)Pulse Width = 5ms, duty cycle <10%.
Value
@ Tmb < 25°
400
700
9
8
16
4
8
12
24
80
150
-65 to +150
Unit
V
V
V
A
A
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.56
62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
1/3
datasheet pdf - http://www.DataSheet4U.net/

MJE13007
SEMICONDUCTORS
MJE13007
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCEO
Collector-Emitter
Sustaining Voltage (*)
IC= 10 mA, IB= 0
ICBO
IEBO
VCE(SAT)
Collector- Cutoff Current
Emitter Cutoff Current
Collector-Emitter
saturation Voltage (*)
VCB = 700 V
TC= 25°C
IB= 0
TC= 125°C
VEB= 9 V, IC= 0
IC= 2 A, IB= 400 mA
IC= 5 A
TC= 25°C
IB= 1 A
TC= 100°C
IC= 8 A, IB= 2 A
VBE(SAT)
Base-Emitter Saturation
Voltage (*)
IC= 2 A, IB= 400 mA
IC= 5 A
TC= 25°C
IB= 1 A
TC= 100°C
hFE
fT
COB
Forward Current transfer
ratio (*)
Transition Frequency
Output Capacitance
VCE= 5.0 V, IC= 2 A
VCE= 5.0 V, IC= 5 A
V = 10 V, I = 0.5 A, f= 1 MHzCE
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C
IE= 0 ; VCB= 10 V ; f= 1 MHz
(*) Pulse Width 300 µs, Duty Cycle 2.0%
400
-
-
-
-
-
-
-
-
-
-
8
5
4
-
- -V
-
-
0.1
1
mA
- 0.1 mA
-1
-
-
2
3
V
- 13
- 1.2
- 1.6 V
- 1.5
-
-
40
30
-
- - MHz
80 - pF
SWITCHING TIMES.
Symbol
Ratings
td Delay Time
tr Rise time
ts Storage Time
tf Fall Time
.
Test Condition(s)
VCC= 125 V; IC= 5 A
IB1= -IB2= 1 mA
tp = 25 µs, duty cycle <1%.
Min Typ Max Unit
- - 0.1
-
-
-
-
1.5
3
µs
- - 0.7
02/10/2012
COMSET SEMICONDUCTORS
2/3
datasheet pdf - http://www.DataSheet4U.net/


Features SEMICONDUCTORS MJE13007 SILICON POWER T RANSISTORS NPN power transistors in a T O-220 package. They are intended for hi gh voltage, high speed power switching inductive circuits where fall time is c ritical. They are particularly suited f or 115V and 220V SWITCHMODE application s such as switching regulator’s, inve rters, motor controls, solenoid/relay d rivers and deflection circuits. Compli ance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM IB IBM I E IEM PT tJ ts Ratings Collector-Emitt er Voltage Collector-Base Voltage Emitt er-Base Voltage Collector Current Colle ctor Peak Current (*) Base Current Base Peak Current (*) Emitter Current Emitt er Peak Current (*) Power Dissipation a t Case Temperature Junction Temperature Storage Temperature range Value 400 7 00 9 8 16 4 8 12 24 80 150 -65 to +150 Unit V V V A A A A A A W °C http://w ww.DataSheet4U.net/ @ Tmb < 25° (*)P ulse Width = 5ms, duty cycle <10%. THE RMAL CHARACTERISTICS Symbol RthJC RthJA Ratings From Junction to C.
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