N-Channel MOSFET. FDMS86101 Datasheet

FDMS86101 Datasheet PDF, Equivalent


Part Number

FDMS86101

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS86101 Datasheet PDF


FDMS86101 Datasheet
FDMS86101
N-Channel PowerTrench® MOSFET
100 V, 60 A, 8 mΩ
Features
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ MSL1 robust package design
„ 100% UIL tested
„ 100% Rg tested
„ RoHS Compliant
October 2012
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
S
S
D
D
D
D
D
D
Power 56
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
60
12.4
200
173
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS86101
Device
FDMS86101
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86101 Rev.C8
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS86101 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
66 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
800 nA
IGSS
Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 13 A
VGS = 6 V, ID = 9.5 A
VGS = 10 V, ID = 13 A, TJ = 125 °C
VDS = 10 V, ID = 13 A
2.0
2.9
-9
6.3
8.4
10.9
45
4.0 V
mV/°C
8
13.5 mΩ
14
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
2255 3000
pF
460 610
pF
30 45 pF
0.1 1.0 3.0
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 13 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 50 V,
ID = 13 A
15
11
27
7
39
22
9.5
10.8
27
20
44
13
55
31
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 13 A
(Note 2)
(Note 2)
IF = 13 A, di/dt = 100 A/μs
0.7 1.2
0.8 1.3
V
56 90 ns
61 98 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 173 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 34 A, VDD = 75 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 49 A.
©2012 Fairchild Semiconductor Corporation
FDMS86101 Rev.C8
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86101 N-Channel PowerTrench® MOSFET October 2012 FDMS86101 N-Channel Pow erTrench® MOSFET 100 V, 60 A, 8 mΩ Fe atures General Description This N-Chann el MOSFET is produced using Fairchild S emiconductor‘s advanced Power Trench process thant has been especially tai lored to minimize the on-state resistan ce and yet maintain superior switching performance. „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A „ A dvanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ 100% Rg tested „ RoHS Compl iant Application „ DC-DC Conversion Top Bottom S Pin 1 S S S G S S D D D G D D D D D Power 56 MOSFET Maximum R atings TA = 25 °C unless otherwise not ed Symbol VDS VGS ID EAS PD TJ, TSTG Pa rameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuo us -Continuous -Pulsed Single Pulse Ava lanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a.
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