N-Channel MOSFET. FDMS86101DC Datasheet

FDMS86101DC Datasheet PDF, Equivalent


Part Number

FDMS86101DC

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMS86101DC Datasheet PDF


FDMS86101DC Datasheet
FDMS86101DC
N-Channel Dual CoolTM Power Trench® MOSFET
February 2012
100 V, 60 A, 7.5 mΩ
Features
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A
„ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A
„ High performance technology for extremely low rDS(on)
„ 100% UIL Tested
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ Primary DC-DC MOSFET
„ Secondary Synchronous Rectifier
„ Load Switch
Pin 1
S
D
D
D
D
S
S
D
D
G
S
S
S
Pin 1
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
100
±20
60
88
14.5
200
216
125
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.3
1.0
38
81
16
23
11
°C/W
Device Marking
86101
Device
FDMS86101DC
Package
Dual CoolTM Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS86101DC Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25°C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 14.5 A
VGS = 6 V, ID = 11.5 A
VGS = 10 V, ID = 14.5 A, TJ = 125 °C
VDD = 10 V, ID = 14.5 A
2
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs Total Gate Charge
Qgd Gate to Drain “Miller” Charge
VDD = 50 V , ID = 14.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 50 V
ID = 14.5 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.7 A
VGS = 0 V, IS = 14.5 A
(Note 2)
(Note 2)
IF = 14.5 A, di/dt = 100 A/μs
Typ
70
2.7
-10
6
8.3
10
44
2354
467
23
1.4
14
8.2
25
5.5
31
18
8.3
7
0.71
0.78
54
62
Max Units
V
mV/°C
1
±100
μA
nA
4V
mV/°C
7.5
12 mΩ
13
S
3135
625
35
pF
pF
pF
Ω
25 ns
17 ns
40 ns
11 ns
44 nC
25 nC
nC
nC
1.2
V
1.3
87 ns
99 nC
©2012 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET February 2012 FDMS861 01DC N-Channel Dual CoolTM Power Trench ® MOSFET 100 V, 60 A, 7.5 mΩ Features „ Dual CoolTM Top Side Cooling PQFN p ackage „ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A „ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A „ High performance technology for extremely lo w rDS(on) „ 100% UIL Tested „ RoHS Co mpliant General Description This N-Cha nnel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trenc h® process. Advancements in both silic on and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent sw itching performance by extremely low Ju nction-to-Ambient thermal resistance. Applications „ Primary DC-DC MOSFET „ Secondary Synchronous Rectifier „ Loa d Switch D D D D S S D D D D Pin 1 S G S S S S Bottom Pin 1 G Top P ower 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate.
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