N-Channel MOSFET. FDMS86150 Datasheet

FDMS86150 Datasheet PDF, Equivalent


Part Number

FDMS86150

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS86150 Datasheet


FDMS86150 Datasheet
October 2012
FDMS86150
N-Channel PowerTrench® MOSFET
100 V, 60 A, 4.85 mΩ
Features
General Description
„ Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
„ Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
Applications
„ Primary DC-DC MOSFET
„ Secondary Synchronous Rectifier
„ Load Switch
Top
Pin 1
Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
Power 56
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
60
16
300
726
156
2.7
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
0.8
45
°C/W
Device Marking
FDMS86150
Device
FDMS86150
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86150 Rev.C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS86150 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100
V
72 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 16 A
VGS = 6 V, ID = 13 A
VGS = 10 V, ID = 16 A, TJ = 125 °C
VDS = 10 V, ID = 16 A
2
3 4V
-10 mV/°C
3.9 4.85
6 7.8 mΩ
7.3 9.1
53 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
3055 4065 pF
696 930
pF
29 50 pF
0.1 0.7 3.6
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 16 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 50 V,
ID = 16 A
18
8.3
28
6
44
25
12.9
9.2
33
17
45
12
62
35
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 16 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 16 A, di/dt = 100 A/μs
0.69
0.78
69
94
1.2
1.3
110
150
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 45 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 726 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 22 A, VDD = 100 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 69 A.
©2012 Fairchild Semiconductor Corporation
FDMS86150 Rev.C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86150 N-Channel PowerTrench® MOSFET October 2012 FDMS86150 N-Channel Pow erTrench® MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Ch annel MOSFET is produced using Fairchil d Semiconductor‘s advanced Power Tren ch® process thant has been especially tailored to minimize the on-state resis tance and yet maintain superior switchi ng performance. „ Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A „ Max rDS (on) = 7.8 mΩ at VGS = 6 V, ID = 13 A „ Advanced Package and Silicon combina tion for low rDS(on) and high efficienc y „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Applicat ions „ Primary DC-DC MOSFET „ Seconda ry Synchronous Rectifier „ Load Switch Top Pin 1 Bottom S Pin 1 S S G S S S D D D G D D D D D Power 56 MOSFET M aximum Ratings TA = 25 °C unless other wise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Po.
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