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2SA1977

Part Number	2SA1977
Manufacturer	NEC
Description	PNP EPITAXIAL SILICON TRANSISTOR
Published	Mar 22, 2005
Detailed Description	DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEAT...
Datasheet	2SA1977 PDF File

Overview

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES • PACKAGE DIMENSION (in millimeters) _0.
2 2.
8+ 0.
4 +0.
1 –0.
05 High fT fT = 8.
5 GHz TYP.
High gain | S21e | = 12.
0 dB TYP.
@f = 1.
0 GHz, VCE = −8 V, IC = −20 mA 2 1.
5 0.
65 +0.
1 –0.
15 • 0.
95 • • Equivalent NPN transistor is the 2SC3583.
_0.
2 2.
9+ High-speed switching characterstics 2 0.
95 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCB0 VCE0 VEB0 IC PT Tj Tstg Rating −20 −12 −3.
0 −50 200 150 −65 to +150 Unit V V V mA mW °C...

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