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2SA2061

Part Number	2SA2061
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications DC-DC Converter Applications Str...
Datasheet	2SA2061 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SA2061 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.
5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.
19 V (max) • High-speed switching: tf = 40 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V Collector current Base current Collector power dissipation DC Pulse t = 10 s DC IC −2.
5 A ICP −4 IB −250 mA PC 1 W (Note 1) 0.
625 JEDEC JEITA TOSHIBA ― ― 2-3S1C Junction...

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