DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2905; 2N2905A PNP switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28
Philips Semiconductors
Product specification
PNP switching transistors
FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver applications for industrial service.
1 handbook, halfpage
2N2905; 2N2905A
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
DESCRIPTION PNP switching transistor in a TO-39 metal package. NPN complements: 2N2219 and 2N2219A.
3
2 2
3
MAM318
1
Fig.1
Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2905 2N2905A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; VCE = −10 V IC = −50 mA; VCE = −2.