ICE17N60 Datasheet PDF


Part Number

ICE17N60

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Total Page 9 Pages
PDF Download
Download ICE17N60 Datasheet PDF


Features Datasheet pdf Preliminary Data Sheet ICE17N60 ICE17N6 0 N-Channel Enhancement Mode MOSFET Fea tures • Low rDS(on) • Ultra Low Gat e Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS ) capability • High peak current capa bility • Increased transconductance p erformance • Optimized design for hig h performance power systems HALOGEN Pr oduct Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 1 7A 600V 0.19Ω 59nC Max Min Typ Typ Q g G S T0220 ICEMOS AND ITS SISTER CO MPANY 3D SEMI OWN THE FUNDAMENTAL PATEN TS FOR SUPERJUNCTION MOSFETS. THE MAJOR ITY OF THESE PATENTS HAVE 17 to 20 YEAR S OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN.
Keywords ICE17N60, datasheet, pdf, Icemos, N-Channel, Enhancement, Mode, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

ICE17N60 Datasheet
Preliminary Data Sheet
ICE17N60
ICE17N60 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
17A
600V
0.19Ω
59nC
D
Max
Min
Typ
Typ
G
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=8.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=17A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
Value
17
51
460
8.5
50
±20
±30
186
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-17N60-000-4
05/15/2013
Free Datasheet http://www.datasheet41u.com/




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)