ICE17N60FP Datasheet PDF


Part Number

ICE17N60FP

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Total Page 9 Pages
PDF Download
Download ICE17N60FP Datasheet PDF


Features Datasheet pdf Preliminary Data Sheet ICE17N60FP ICE17 N60FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductan ce performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) F REE TA=25oC ID=250uA VGS=10V VDS=480V D 17A 600V 0.19Ω 59nC Max Min Typ Ty p Qg G S ICEMOS AND ITS SISTER COMPA NY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS O F REMAINING LIFE. THIS PORTFOLIO HAS GR ANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, T.
Keywords ICE17N60FP, datasheet, pdf, Icemos, N-Channel, Enhancement, Mode, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

ICE17N60FP Datasheet
Preliminary Data Sheet
ICE17N60FP
ICE17N60FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
17A
600V
0.19Ω
59nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings b , at Tj=25oC, unless otherwise specified
T0220 Full-PAK
Isolated (T0-220)
1=Gate, 2=Drain,
3=Source
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=8.5A
17 A
51 A
460 mJ
Avalanche current, repetitive
I AR limited by Tjmax 8.5 A
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=17A,
Tj=125oC
50
V/ns
Gate source voltage
Static
VGS
AC (f>1Hz)
±20
±30
V
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25oC
M 2.5 screws
35
-55 to +150
50
W
oC
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
SP-17N60FP-000-3
05/15/2013
Free Datasheet http://www.datasheet41u.com/




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)