2SA2047 Datasheet PDF


Part Number

2SA2047

Description

MEDIUM POWER TRANSISTOR

Manufacture

Rohm

Total Page 4 Pages
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Features Datasheet pdf 2SA2047 Transistor Medium power transis tor (−30V, −0.5A) 2SA2047 !Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA) 2) Low saturatio n voltage, typically (Typ. : −150mV a t IC = −100A, IB = −100mA) 3) Stron g discharge power for inductive load an d capacitance load. 4) Complements the 2SC5729 !External dimensions (Units : m m) 0.65 0.65 0.7 UMT3 0.3 (3) (1) 1. 25 0.2 2.1 0.15 (2) (1)Emitter (2)Ba se (3)Collector 0.1Min. Each lead has same dimensions Abbreviated symbol : UV !Applications Small signal low freq uency amplifier High speed switching ! Structure PNP Silicon epitaxial planar transistor !Packaging specifications P ackage Type 2SA2047 Code Basic ordering unit (pi.
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2SA2047 Datasheet
Transistor
2SA2047
Medium power transistor (30V, 0.5A)
2SA2047
!Features
1) High speed switching. (Tf : Typ. : 40ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100A, IB = 100mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5729
!Applications
Small signal low frequency amplifier
High speed switching
!External dimensions (Units : mm)
UMT3
1.25
2.1
(1)Emitter
(2)Base
(3)Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol : UV
!Structure
PNP Silicon epitaxial planar transistor
!Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SA2047
Taping
T106
3000
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
1 Pw=10ms
2 Each terminal mounted on a recommended land
Limits
30
30
6
0.5
1.0
200
150
55~+150
Unit
V
V
V
A
A 1
mW 2
°C
°C
1/3
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