J652 Datasheet PDF | Sanyo Semicon Device





(PDF) J652 Datasheet PDF

Part Number J652
Description 2SJ652
Manufacture Sanyo Semicon Device
Total Page 4 Pages
PDF Download Download J652 Datasheet PDF

Features: www.DataSheet4U.com Ordering number : E NN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Devic e Applications Features • • • • Package Dimensions unit : mm 2063A [2 SJ652] 10.0 3.2 3.5 7.2 Low ON-resista nce. Ultrahigh-speed switching. 4V driv e. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0. 75 2.4 0.7 2.55 1 2 3 2.55 2.4 Spec ifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Volt age Gate-to-Source Voltage Drain Curren t (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature S torage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle 1% Tc=25°C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratin gs --60 ±20 --28 --112 2.0 30 150 --55 to +150 Unit V V A A W W °C °C 2.55 2.55 Electrical Characteristics at T a=25°C Parameter Drain-to-Source Break down Voltage Zero-Gate Voltage Drain Cu rrent Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Sy.

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J652 datasheet
www.DataSheet4U.com
Ordering number : ENN7625
2SJ652
P-Channl Silicon MOSFET
2SJ652
General-Purpose Switching Device Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ652]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--28
--112
2.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J652
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--14A
min
--60
--1.2
18
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
26 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72503 TS IM TA-4245 No.7625-1/4
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