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HFS2N60

600V N-Channel MOSFET

Description

HFS2N60 July 2005 BVDSS = 600 V HFS2N60 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.5 5 nC (Typ (Typ.) ) RDS(on) typ = 4.0 Ω ID = 2.0 A TO-220F 1 2 3 1.Gate 2. Drain 3...

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