DatasheetsPDF.com

2SB1011. B1011 Datasheet

DatasheetsPDF.com

2SB1011. B1011 Datasheet






B1011 2SB1011. Datasheet pdf. Equivalent




B1011 2SB1011. Datasheet pdf. Equivalent





Part

B1011

Description

2SB1011



Feature


Power Transistors 2SB1011 Silicon PNP t riple diffusion planar type For low-fre quency output amplification 8.0+0.5 – 0.1 Unit: mm 3.2Âą0.2 ■ Features †˘ High collector-base voltage (Emitter open) VCBO • High collector-emitter v oltage (Base open) VCEO • Large colle ctor power dissipation PC • Low colle ctor-emitter saturation voltage VCE(sat ) φ 3.16Âą0.1 3.8Âą0.3 11.0Âą0..
Manufacture

Panasonic Semiconductor

Datasheet
Download B1011 Datasheet


Panasonic Semiconductor B1011

B1011; 5 1.9±0.1 ■ Absolute Maximum Rating s Ta = 25°C Parameter Collector-base v oltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base volta ge (Collector open) Collector current P eak collector current Collector power d issipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I CP PC Tj Tstg Rating −400 −400 −5 −100 −200 1.2 150 −55 to +1.


Panasonic Semiconductor B1011

50 Unit V V V 1 2 3 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 1.76±0.1 m A mA W °C °C ■ Electrical Characte ristics Ta = 25°C ± 3°C Parameter Co llector-base voltage (Emiter open) Coll ector-emitter voltage (Base open) Emite r-base voltage (Collector open) Forward current transfer ratio Collector-emitt er saturation voltage Base-emitter satu ration voltage Transition frequ.


Panasonic Semiconductor B1011

ency Collector output capacitance (Commo n base, input open circuited) Symbol VC BO VCEO VEBO hFE VCE(sat) VBE(sat) fT C ob Conditions IC = −100 µA, IE = 0 I C = −500 µA, IB = 0 IE = −100 µA, IC = 0 VCE = −5 V, IC = −30 mA IC = −50 mA, IB = −5 mA IC = −50 mA, IB = −5 mA VCB = −30 V, IE = 20 mA , f = 200 MHz VCB = −30 V, IE = 0, f = 1 MHz 70 9 Min −400 −400 −5 30 −2.5 −1.5 .

Part

B1011

Description

2SB1011



Feature


Power Transistors 2SB1011 Silicon PNP t riple diffusion planar type For low-fre quency output amplification 8.0+0.5 – 0.1 Unit: mm 3.2Âą0.2 ■ Features †˘ High collector-base voltage (Emitter open) VCBO • High collector-emitter v oltage (Base open) VCEO • Large colle ctor power dissipation PC • Low colle ctor-emitter saturation voltage VCE(sat ) φ 3.16Âą0.1 3.8Âą0.3 11.0Âą0..
Manufacture

Panasonic Semiconductor

Datasheet
Download B1011 Datasheet




 B1011
Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
■ Features
• High collector-base voltage (Emitter open) VCBO
• High collector-emitter voltage (Base open) VCEO
• Large collector power dissipation PC
• Low collector-emitter saturation voltage VCE(sat)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−400
−400
−5
−100
−200
1.2
150
−55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2Âą0.2
0.75Âą0.1
0.5Âą0.1
4.6Âą0.2
2.3Âą0.2
0.5Âą0.1
1.76Âą0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emiter open) VCBO IC = −100 µA, IE = 0
−400
V
Collector-emitter voltage (Base open) VCEO IC = −500 µA, IB = 0
−400
V
Emiter-base voltage (Collector open) VEBO IE = −100 µA, IC = 0
−5
V
Forward current transfer ratio
hFE VCE = −5 V, IC = −30 mA
30

Collector-emitter saturation voltage
VCE(sat) IC = −50 mA, IB = −5 mA
−2.5 V
Base-emitter saturation voltage
VBE(sat) IC = −50 mA, IB = −5 mA
−1.5 V
Transition frequency
fT VCB = −30 V, IE = 20 mA, f = 200 MHz
70
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −30 V, IE = 0, f = 1 MHz
9 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00036BED
1




 B1011
2SB1011
PC  Ta
1.6
Without heat sink
1.2
0.8
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC  VCE
−120
TC=25˚C
−100
–0.9mA
−80 –0.8mA
–0.7mA
IB=–1mA
−60 –0.6mA
–0.5mA
–0.4mA
−40
–0.3mA
–0.2mA
−20
–0.1mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
−120
VCE=–5V
IC  VBE
25˚C
−100
TC=75˚C
−80
−60
−40
–25˚C
−20
0
0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0
Base-emitter voltage VBE (V)
−100
−10
VCE(sat)  IC
IC/IB=10
−1
− 0.1
TC=75˚C
25˚C
–25˚C
− 0.01
− 0.1
−1
−10 −100
Collector current IC (mA)
hFE  IC
240
VCE=–5V
200
Ta=75˚C
160
120 25˚C
–25˚C
80
40
0
− 0.1
−1
−10 −100
Collector current IC (mA)
fT  IE
120
VCB=–30V
f=200MHz
TC=25˚C
100
80
60
40
20
0
1 10 100 1 000
Emitter current IE (mA)
Cob  VCB
30
IE=0
f=1MHz
TC=25˚C
25
20
15
10
5
0
−1 −10 −100
Collector-base voltage VCB (V)
Sefe operation area
−1 000
Single pulse
TC=25˚C
ICP
−100
IC
t=100ms
t=10ms
t=1s
−10
−1
− 0.1
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
2 SJD00036BED




 B1011
Rth  t
104
free air
103
102
10
1
10−1
10−4
10−3
10−2
10−1
1
10
Time t (s)
102 103
104
2SB1011
SJD00036BED
3



Recommended third-party B1011 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)