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NPN Transistor. C3831 Datasheet

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NPN Transistor. C3831 Datasheet






C3831 Transistor. Datasheet pdf. Equivalent




C3831 Transistor. Datasheet pdf. Equivalent





Part

C3831

Description

Silicon NPN Transistor



Feature


2SC3831 Silicon NPN Triple Diffused Plan ar Transistor (High Voltage and High Sp eed Switching Transistor) sAbsolute max imum ratings (Ta=25°C) Symbol VCBO VCE O VEBO IC IB PC Tj Tstg 2SC3831 600 500 10 10(Pulse20) 4 100(Tc=25°C) 150 – 55 to +150 Unit V V V A A W °C °C Ap plication : Switching Regulator and Gen eral Purpose sElectrical Characteristi cs Symbol ICBO IEBO V(BR.
Manufacture

Sanken electric

Datasheet
Download C3831 Datasheet


Sanken electric C3831

C3831; )CEO hFE VCE(sat) VBE(sat) fT COB Condit ions VCB=600V VEB=10V IC=25mA VCE=4V, I C=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 1max 100max 5 00min 10 to 30 0.5max 1 . 3 max 8typ 10 5typ (Ta=25°C) 2SC3831 Unit External Dimensions MT-100(TO3P) 5.0±0.2 15.6 0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 mA µA 4.0 V V MHz pF 19.9±0.3 a b 3.2±0.1 20.0min 4.0max V.


Sanken electric C3831

2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Co mmon Emitter) VCC (V) 200 RL (Ω) 40 I C (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 ( A) 0.5 IB2 (A) –1.0 ton (µs) 1max ts tg (µs) 4.5max tf (µs) 0.5max 5.45± 0.1 B C E 5.45±0.1 Weight : Approx 6 .0g a. Type No. b. Lot No. I C – V C E Characteristics (Typical) 10 A .2 1A V CE (sat),V BE (sat) – I C Te.


Sanken electric C3831

mperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter S aturation Voltage V B E (sa t) (V ) I C – V BE Temperature Characteristics (Typical) 10 (V CE =4V) =1 800 mA V B E (sat) 1 –55˚C (Cas 25˚C (C Col lector Current I C (A) e Temp) p) ) ) mp 6 400 mA ase Tem Collector Curre nt I C (A) 8 IB 60 0m.

Part

C3831

Description

Silicon NPN Transistor



Feature


2SC3831 Silicon NPN Triple Diffused Plan ar Transistor (High Voltage and High Sp eed Switching Transistor) sAbsolute max imum ratings (Ta=25°C) Symbol VCBO VCE O VEBO IC IB PC Tj Tstg 2SC3831 600 500 10 10(Pulse20) 4 100(Tc=25°C) 150 – 55 to +150 Unit V V V A A W °C °C Ap plication : Switching Regulator and Gen eral Purpose sElectrical Characteristi cs Symbol ICBO IEBO V(BR.
Manufacture

Sanken electric

Datasheet
Download C3831 Datasheet




 C3831
2SC3831
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3831
600
500
10
10(Pulse20)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=600V
VEB=10V
IC=25mA
VCE=4V, IC=5A
IC=5A, IB=1A
IC=5A, IB=1A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
(Ta=25°C)
2SC3831
1max
100max
500min
10 to 30
0.5max
1 . 3 max
8typ
105typ
Unit
mA
µA
V
V
V
MHz
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
200 40
5
10 –5 0.5
IB2
(A)
–1.0
ton
(µs)
1max
tstg
(µs)
4.5max
tf
(µs)
0.5max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
10
1A 800mA
8 600mA
400mA
6
4 200mA
100mA
2
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
10
8
6
4
0
0.02
VCE(sat)
125˚C
–5 5 ˚ C
0.05 0.1
0.5 1
Collector Current IC(A)
5 10
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–55˚C
10
t on• t stg• t f– I C Characteristics (Typical)
10
5
VCC 200V
IC:IB1:IB2=10:1:–2
tstg
1
0.5 ton
θ j-a– t Characteristics
2
1
0.5
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 10
0.1
0.2
tf
0.5 1
Collector Current IC(A)
5
0.1
10 1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
30
10 1ms 100µs
5
Reverse Bias Safe Operating Area
30
10
5
Pc–Ta Derating
100
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
0.02
8 10
50 100
Collector-Emitter Voltage VCE(V)
500 600
1
0.5
1
0.05
0.01
50
Without Heatsink
Natural Cooling
L=3mH
IB2 =–0.5A
Duty:less than 1%
100 500 600
Collector-Emitter Voltage VCE(V)
50
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
71











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