GT50N322A Bipolar Transistor Datasheet

GT50N322A Datasheet, PDF, Equivalent


Part Number

GT50N322A

Description

Insulated Gate Bipolar Transistor

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
Datasheet
Download GT50N322A Datasheet


GT50N322A
GT50N322A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50N322A
Voltage Resonance Inverter Switching Application
Fifth Generation IGBT
Unit: mm
FRD included between emitter and collector
Enhancement mode type
High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs)
Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Diode forward current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature
DC
1ms
DC
1ms
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
1000
± 25
50
120
15
120
156
150
55 to 150
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Marking
Gate
Emitter
TOSHIBA
50N322A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2008-01-11

GT50N322A
Electrical Characteristics (Ta = 25°C)
GT50N322A
Characteristics
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Rise time
Turn-on time
Fall time
Turn-off time
Diode forward voltage
Reverse recovery time
Thermal Resistance
Thermal Resistance
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
VF
trr
Rth(j-c)
Rth(j-c)
VGE = ±25 V, VCE = 0
VCE = 1000 V, VGE = 0
IC = 60 mA, VCE = 5 V
IC = 60 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
Resistive Load
VCC = 600 V, IC = 60 A
VGG = ±15 V, RG = 51 Ω
(Note 1)
IF = 15 A, VGE = 0
IF = 15 A, VGE = 0, di/dt = − 20 A/μs
3.0
Note 1: Switching time measurement circuit and input/output waveforms
Typ. Max Unit
2.2
4000
0.23
0.33
0.10
0.70
1.2
0.8
± 500
1.0
6.0
2.8
0.25
1.9
0.8
4.0
nA
mA
V
V
pF
μs
V
µs
°C/W
°C/W
VGE
90%
0 10%
RG
0 IC
VCC
90%
90%
0 VCE
10%
tf
toff
10%
tr
ton
2 2008-01-11


Features GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5 0N322A Voltage Resonance Inverter Switc hing Application Fifth Generation IGBT • • • • FRD included between em itter and collector Enhancement mode ty pe High speed IGBT : tf = 0.10 μs (typ .) (IC = 60 A) FRD : trr = 0.8 μs (typ .) (di/dt = −20 A/μs) Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A) Unit: mm Absolute Maximum Rati ngs (Ta = 25°C) Characteristics Collec tor-emitter voltage Gate-emitter voltag e Collector current DC 1ms DC 1ms Symbo l VCES VGES IC ICP IF IFP PC Tj Tstg Ra ting 1000 ± 25 50 120 15 120 156 150 55 to 150 Unit V V A JEDEC A ⎯ 2-16C1C Diode forward current Collec tor power dissipation (Tc = 25°C) Junc tion temperature Storage temperature J EITA TOSHIBA W °C °C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of hi gh temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reli.
Keywords GT50N322A, datasheet, pdf, Toshiba Semiconductor, Insulated, Gate, Bipolar, Transistor, T50N322A, 50N322A, 0N322A, GT50N322, GT50N32, GT50N3, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)