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AP9412AGI

Advanced Power Electronics
Part Number AP9412AGI
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 15, 2014
Detailed Description AP9412AGI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance ▼ Single Drive Requireme...
Datasheet PDF File AP9412AGI PDF File

AP9412AGI
AP9412AGI

Overview
AP9412AGI RoHS-compliant Product Advanced Power Electronics Corp.
▼ Fast Switching Performance ▼ Single Drive Requirement ▼ Full Isolation Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 6mΩ 68A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±20 68 43 250 34.
7 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
6 65 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200805081 AP9412AGI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.
5V, ID=30A Min.
30 1 - Typ.
30 21 3.
6 12 9 80 23 15 435 250 Max.
Units 6 8 3 10 ±100 34 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VGS= ±20V ID=30A VDS=24V VGS=4.
5V VDS=15V ID=30A RG=3.
3Ω,VGS=10V RD=0.
5Ω VGS=0V VDS=25V f=1.
0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacita...


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