Dual N-Channel Enhancement Mode Field Effect Transistor
Description
Gre r Pro
STS8217
Ver 1.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
16.5 @ VGS=4.0V 24V 7A 17 18 27 @ VGS=3.7V @ VGS=3.1V @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
TSOT 26 Top View
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