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PBSS5330PAS

NXP
Part Number PBSS5330PAS
Manufacturer NXP
Description 3A PNP low VCEsat (BISS) transistor
Published Oct 22, 2014
Detailed Description DF N2 020 D-3 PBSS5330PAS 11 September 2014 30 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 1. General...
Datasheet PDF File PBSS5330PAS PDF File

PBSS5330PAS
PBSS5330PAS


Overview
DF N2 020 D-3 PBSS5330PAS 11 September 2014 30 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 1.
General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.
NPN complement: PBSS4330PAS 2.
Features and benefits • • • • • • • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Bo...



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