DatasheetsPDF.com

FTD2012

N- Channel Silicon MOS FET Load S/W USE

Description

FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features Low ON-state resistance. 4V drive. Mount height of 1.1mm. Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature...

Sanyo Semicon Device

Download FTD2012 Datasheet

Similar Datasheet

FTD2003 N-Channel Silicon MOS FET - Sanyo Semiconductor Corporation
FTD2005 Ultrahigh-Speed Switching Applications - Sanyo Semicon Device
FTD2007 Ultrahigh-Speed Switching Applications - Sanyo Semicon Device
FTD2011 Load Switching Applications - Sanyo Semicon Device
FTD2011A N CHANNEL MOS SILICON TRANSISTOR - Sanyo Semicon Device
FTD2012 N- Channel Silicon MOS FET Load S/W USE - Sanyo Semicon Device
FTD2013 Load Switching Applications - Sanyo Semicon Device
FTD2014 Load Switching Applications - Sanyo Semicon Device
FTD2015 Load Switching Applications - Sanyo Semicon Device
FTD2017 Load Switching Applications - Sanyo Semicon Device

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)