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D2110

2SD2110

Description

INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS ·Designed for low frequenc...

Inchange Semiconductor

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