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HFP10N60S

N-Channel MOSFET

Description

HFP10N60S Nov 2007 HFP10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A FEATURES q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ.) q Extended Safe Operating Area q Lower RDS(...

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