Power MOSFET. IXTH102N15T Datasheet

IXTH102N15T MOSFET. Datasheet pdf. Equivalent


IXYS IXTH102N15T
Trench Gate
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
IXTA102N15T
IXTH102N15T
IXTP102N15T
IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
VDSS =
ID25 =
RDS(on)
150V
102A
18mΩ
TO-3P (IXTQ)
G
S
(TAB)
GD S
(TAB)
G DS
(TAB)
G
D
S
(TAB)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C RGS = 1MΩ
Continuous
Transient
Maximum Ratings
150
V
150
V
± 20
V
± 30
V
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
102
A
75
A
300
A
51
A
750
mJ
IS IDM, VDD VDSS , TJ 175°C
TC = 25°C
10
455
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
°C
260
°C
Mounting Torque (TO-220, TO-3P, TO-247) 1.13 / 10
Mounting Force (TO-263)
10..65/2.2..14.6
Nmlb.in.
N/lb.
TO-263
TO-220
TO-3P
TO-247
2.5
g
3.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
150
V
2.5
5.0 V
± 200 nA
5 μA
250 μA
18 mΩ
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z Avalanche Rated
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS99661C(04/09)


IXTH102N15T Datasheet
Recommendation IXTH102N15T Datasheet
Part IXTH102N15T
Description Power MOSFET
Feature IXTH102N15T; Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP10.
Manufacture IXYS
Datasheet
Download IXTH102N15T Datasheet




IXYS IXTH102N15T
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
VDS= 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS , ID = 25A
RthJC
RthCH
(TO-220)
(TO-3P & TO-247)
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Characteristic Values
Min. Typ. Max.
50
80
S
5220
pF
685
pF
95
pF
20
ns
14
ns
25
ns
22
ns
87
nC
23
nC
31
nC
0.33 °C/W
0.50
°C/W
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IF = 51A, -di/dt = 100A/μs
IRM
QRM
VR = 75V, VGS = 0V
Characteristic Values
Min. Typ. Max.
102 A
400 A
1.3 V
97
ns
8.4
A
409
nC
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



IXYS IXTH102N15T
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
TO-247 (IXTH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
2 - Drain
Tab - Drain
Inches
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1
4.50
.177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC
242 BSC
TO-3P (IXTQ) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
© 2009 IXYS CORPORATION, All Rights Reserved





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