Silicon MOSFET. FW103 Datasheet

FW103 Datasheet PDF, Equivalent


Part Number

FW103

Description

P-Channel Silicon MOSFET

Manufacture

Sanyo Semicon Device

Total Page 3 Pages
PDF Download
Download FW103 Datasheet PDF


FW103 Datasheet
Ordering number : EN5305A
P-Channel Silicon MOSFET
FW103
Ultrahigh-Speed Switching Applications
Features
• Low ON resistance
• Ultrahigh-speed switching.
• Composite type with two 4V-drive P-channel MOSFETs
facilitating high-density mounting.
• Matched pair capability.
Package Dimensions
unit: mm
2129-SOP8
[FW103]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
VDSS
VGSS
ID
IDP
PD
PW10µs, duty cycle1%
Mounted on a ceramic board
(1000mm2×0.8mm) 1unit
Total Dissipation
PT Mounted on a ceramic board
(1000mm2×0.8mm)
Channel Temperature
Tch
Storage temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
D-S Breakdown Voltage
V(BR)DSS
Zero-Gate-Voltage Drain Current IDSS
Gate-to-Source Leakage Current IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance yfs
Static Drain-to-Source
RDS(on)
ON-State Resistance
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–3A
ID=–3A, VGS=–10V
ID=–3A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Ratings
–30
±20
–3
–32
1.7
Unit
V
V
A
A
W
2.0 W
150
–55 to +150
°C
°C
Ratings
Unit
min typ max
–30 V
–100 µA
±10 µA
–1.0 –2.5 V
24
S
95 125 m
150 205 m
550 pF
370 pF
70 pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-0255 No.5305-1/3

FW103 Datasheet
Continued from preceding page.
Parameter
Symbol
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
td(on)
tr
td(off)
tf
VSD
Switching Time Test Circuit
FW103
Conditions
See specified Test Circuit.
IS=–3A, VGS=0
Electrical Connection
(Top view)
Ratings
min typ max
20
110
330
170
–1.0 –1.2
Unit
ns
ns
ns
ns
V
ASO
7
5 IDP
,,,,,,,,,3
2
,,,,,,,,,,,,,,,,,,10
10µs
1ms 100µs
7
,,,,,,,,,5
3
,,,,,,,,,2
,,,,,,,,,1.0
7
5
3
2
0.1
7
ID
Mounted
Operation in this
oanreaaceramic
is limited by RDS(on).
Ta=25°C
1pulse
1unit
board
10 ms
100 ms
(1000mm 2×0.8mm)
5
2 3 5 7 1.0
2 3 5 7 10
23
Drain-to-Source Voltage, VDS – V
2.4 P D – Ta
5
2.0
1.7
1.6
1.2
0.8
Per unTiottdalisdsiispsaiptiaotnion
0.4
Mounted on a ceramic board (1000mm2×0.8mm)
0
0 20 40 60 80 100 120
Ambient Temperature, Ta – °C
140
160
1.8 P D(FET 2) – P D(FET1)
1.7
1.6
1.4
1.2
1.0
0.8
0.6
Mounted on a ceramic board (1000mm ×2 0.8mm)
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Allowable Power Dissipation, PD(FET1) – W
No.5305-2/3


Features Datasheet pdf Ordering number : EN5305A P-Channel Sil icon MOSFET FW103 Ultrahigh-Speed Switc hing Applications Features • Low ON resistance • Ultrahigh-speed switchin g. • Composite type with two 4V-drive P-channel MOSFETs facilitating high-de nsity mounting. • Matched pair capabi lity. Package Dimensions unit: mm 2129 -SOP8 [FW103] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source V oltage Gate-to-Source Voltage Drain Cur rent (DC) Drain Current (pulse) Allowab le Power Dissipation VDSS VGSS ID IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1u nit Total Dissipation PT Mounted on a ceramic board (1000mm2×0.8mm) Channe l Temperature Tch Storage temperature Tstg Electrical Characteristics at T a=25°C Parameter Symbol Conditions D-S Breakdown Voltage V(BR)DSS Zero- Gate-Voltage Drain Current IDSS Gate-t o-Source Leakage Current IGSS Cutoff V oltage VGS(off) Forward Transfer Admittance yfs Static Drain-to-Source RDS.
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