MOS FET. FW113 Datasheet

FW113 Datasheet PDF, Equivalent


Part Number

FW113

Description

P-Channel Silicon MOS FET

Manufacture

Sanyo Semicon Device

Total Page 3 Pages
PDF Download
Download FW113 Datasheet PDF


FW113 Datasheet
Ordering number :EN5847
P-Channel Silicon MOS FET
FW113
S/W Load Applications
Features
· 4V drive.
· Low ON resistance.
Package Dimensions
unit:mm
2129
[FW113]
85
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1
5.0
4
0.595 1.27 0.43
1:Source1
2:Gate1
3:Source2
4:Gate2
0.2 5:Drain2
6:Drain2
7:Drain1
8:Drain1
SANYO:SOP8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on ceramic board (1000mm2×0.8mm) 1unit
Mounted on ceramic board (1000mm2×0.8mm)
Ratings
–30
±20
–5
–32
1.7
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
D-S Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Current
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–5A
ID=–5A, VGS=–10V
ID=–2A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–5A
VDS=–10V, VGS=–10V, ID=–5A
VDS=–10V, VGS=–10V, ID=–5A
IS=–5A, VGS=0
Ratings
min typ
–30
–1.0
5
8
42
85
820
470
230
15
150
85
90
25
5
7
–1.0
max
–100
±10
–2.5
53
120
–1.5
Unit
V
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52698TS (KOTO) TA-1215 No.5847-1/3

FW113 Datasheet
Switching Time Test Circuit
VIN
0V
–10V
PW=10µs
D.C.1%
VIN
VDD=–15V
ID=–5A
RL=3
D VOUT
G
FW113
P.G 50
S
FW113
I D - VDS
-6
-5
-4
–3.5V
-3
-2
–3.0V
-1
VGS=–2.5V
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
Drain-to-Source Voltage, VDS - V
5 VDS=–10V
3
2
10
7
5
| yfs | - I D
Ta=–25˚C
75˚C
25˚C
3
2
1.0
7
5
3
2
0.1
7
-0.01 2 3
5 7-0.1 2 3 5 7-1.0 2 3 5 7-10
Drain Current, ID - A
2 3 5 7-100
140 RDS(on) - Tc
120
100 ID=–2A,VGS=–4V
80
60 ID=–5A, VGS=–10V
40
20
0
-60 -40 -20 0 20 40 60 80 100 120 140
Case Temperature, Tc - ˚C
-10
VDS =–10V
-9
-8
-7
-6
I D - VGS
-5
-4
-3
-2
-1
0
0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
Gate-to-Source Voltage, VDS - V
140
RDS(on) - VGS
Tc=25˚C
120
100
80
60
40
20
0
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
Gate-to-Source Voltage,VGS - V
-10
7
VGS=0
5
3
2
I F - VSD
-1.0
7
5
3
2
-0.1
7
5
3
2
-0.01
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Diode Forward Voltage, VSD – V
-1.4
No.5847-2/3


Features Datasheet pdf Ordering number :EN5847 P-Channel Silic on MOS FET FW113 S/W Load Applications Features · 4V drive. · Low ON resist ance. Package Dimensions unit:mm 2129 [FW113] 85 0.1 1.5 1.8max 4.4 0.3 6.0 Specifications Absolute Maximum Rating s at Ta = 25˚C 1 5.0 4 0.595 1.27 0 .43 1:Source1 2:Gate1 3:Source2 4:Gate 2 0.2 5:Drain2 6:Drain2 7:Drain1 8:Drai n1 SANYO:SOP8 Parameter Drain-to-Sourc e Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allo wable Power Dissipation Total Dissipati on Channel Temperature Storage Temperat ure Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle ≤1% Mounted on ceramic board (1000mm2 ×0.8mm) 1unit Mounted on ceramic board (1000mm2×0.8mm) Ratings –30 ±20 5 –32 1.7 2.0 150 –55 to +150 Un it V V A A W W ˚C ˚C Electrical Char acteristics at Ta = 25˚C Parameter D- S Breakdown Voltage Zero Gate Voltage D rain Current Gate-to-Source Leakage Cur rent Cutoff Current Forward Transfer Admittance Static Drain-to-Source ON-State Resis.
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